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all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 17 rev. 04, 2010-06-09 PTFA220081M confidential, limited internal distribution rf characteristics two-tone measurements (not subject to production test C verifed by design / characterization in infneon test fxture) v dd = 28 v, i dq = 100 ma, p out = 8 w pep, ? = 2140 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 17 db drain effciency h d 38 % intermodulation distortion imd C31 dbc high power rf ldmos field effect transistor 8 w, 700 C 2200 mhz description the PTFA220081M an unmatched 8-watt ldmos fet suitable for power amplifers applications with frequencies from 700 mhz to 2200 mhz. this ldmos transistor offers excellent gain, effciency and linearity performance in a small overmolded plastic package. PTFA220081M package pg-son-10 features ? typical two-carrier wcdma performance, 8 db par - p out = 33 dbm avg - acpr = C40 dbc ? typical cw performance, 940 mhz, 28 v - p out = 40 dbm - effciency = 59% - gain = 20 db ? typical cw performance, 2140 mhz, 28 v - p out = 40 dbm - effciency = 50% - gain = 15 db ? capable of handling 10:1 vswr @ 28 v, 8 w (cw) output power ? integrated esd protection : human body model, class 2 (minimum) ? excellent thermal stability ? pb-free and rohs compliant 0 10 20 30 40 50 -6 0 -5 0 -4 0 -3 0 -2 0 -1 0 34 35 36 37 38 39 40 41 ef fi ci en cy ( %) im d (d bc ) outp ut p ow er , pep ( db m) tw o- to ne d ri ve -u p v dd = 28 v , i dq = 100 m a, ? 1 = 939 .5 m hz , ? 2 = 940 .5 m hz ef fi ci en cy im d 3r d im d 5t h
data sheet 2 of 17 rev. 04, 2010-06-09 PTFA220081M confidential, limited internal distribution rf characteristics (cont.) two-tone measurements (not subject to production test C verifed by design / characterization in infneon test fxture) v dd = 28 v, i dq = 100 ma, p out = 8 w pep, ? = 940 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 20.7 db drain effciency h d 39 % intermodulation distortion imd C30 dbc input return loss irl 20 db dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 a v (br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 a r ds(on) 1.10 w operating gate voltage v ds = 28 v, i dq = 100 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C0.5 to +12 v junction temperature t j 175 c storage temperature range t stg C65 to +150 c thermal resistance (tcase = 70c, 8 w dc ) r qjc 4.2 c/w moisture sensitivity level level test standard package temperature unit 3 ipc/jedec j-std-020 260 c ordering information type package outline package description shipping PTFA220081M v4 pg-son-10 molded plastic, smd tape & reel, 500 pcs
PTFA220081M confidential, limited internal distribution data sheet 3 of 17 rev. 04, 2010-06-09 typical performance, 940 mhz 5 15 25 35 45 55 -5 0 -4 0 -3 0 -2 0 -1 0 0 30 31 32 33 34 35 36 37 38 39 dr a in ef fi ci en cy (% ) im d & ac pr (d bc ) ou tp ut po we r (d bm ) tw o- ca rri er w cdma 3g pp dr iv e- up v dd = 28 v, i dq = 100 ma , ? = 940 mh z 3g pp w cdm a, p/ ar = 8: 1, 10 mh z ca rri er sp ac ing, bw 3. 84 mh z ef fi ci en c y ac pr im d u p im d lo w 20 30 40 50 60 70 18. 8 19. 2 19. 6 20. 0 20. 4 20. 8 34 35 36 37 38 39 40 41 dr ain ef fi c ien cy (% ) ga in (d b) ou tp ut po we r (d bm ) po we r sw eep, cw ga in & ef fi ci ency vs. ou tp ut po we r v dd = 28 v, i dq = 100 ma e ffi ci en cy 920 mh z 940 mh z 960 mh z ga in e ffi ci en cy 920 mh z 940 mh z 960 mh z ga in 10 20 30 40 50 60 19. 0 19. 5 20. 0 20. 5 21. 0 21. 5 29 30 31 32 33 34 35 36 37 38 39 dr a in ef fi ci en cy (% ) g ain (d b) ou tp ut po we r (d bm ) tw o- ca rrie r w cdma 3g pp v dd = 28 v, i dq = 100 ma , ? = 940 mh z 3g pp w cdm a, p/ ar = 8: 1, 10 mh z ca rr ie r sp ac ing, bw 3. 84 mh z e ffi ci en cy ga in 10 20 30 40 50 60 70 19 .0 19 .5 20 .0 20 .5 21 .0 21 .5 22 .0 32 33 34 35 36 37 38 39 40 41 42 e ffi c ien cy (% ) po we r ga in (d b) ou t put po we r (d bm ) cw ga in & e ffi ci ency vs. out put po we r & v dd i dq = 100 ma , ? = 940 mh z v dd = 24 v v dd = 28 v v dd = 32 v ef fi ci enc y ga in
data sheet 4 of 17 rev. 04, 2010-06-09 PTFA220081M confidential, limited internal distribution typical performance, 940 mhz (cont.) broadband circuit impedance frequency z source w z load w mhz r jx r jx 869 1.54 7.20 14.11 9.10 894 1.49 6.60 14.91 8.70 920 1.59 5.70 13.83 9.10 940 1.61 5.10 10.83 10.70 960 1.61 5.10 13.34 9.80 1930 1.91 C2.10 5.59 6.20 1990 2.11 C1.70 4.21 5.20 2110 2.45 C1.00 4.43 5.10 2170 2.30 C1.00 4.25 5.60 z 0 = 50 w 10 20 30 40 50 18 19 20 21 22 33 34 35 36 37 38 39 40 41 e ffi ci en cy (% ) ga in (d b) ou t put po we r, pep (d bm ) tw o- t one dr iv e- up v dd = 28 v, i dq = 150 ma , ? 1 = 939. 5 mh z, ? 2 = 940. 5 mh z e ffi ci enc y g ain -3 0 -2 7 -2 4 -2 1 -1 8 -1 5 -1 2 -9 -6 17 .0 17 .5 18 .0 18 .5 19 .0 19 .5 20 .0 20 .5 21 .0 880 900 920 94 0 9 60 980 100 0 in pu t re tu rn lo ss (d b) po we r ga in (d b) fr equen cy (m hz ) tw o- to ne ga in & i npu t re tu rn los s v dd = 28 v, i dq = 100 ma , sp ac ing = 1 00 kh z, pep = 8 w ir l ga in z source z load g s d
PTFA220081M confidential, limited internal distribution data sheet 5 of 17 rev. 04, 2010-06-09 reference circuit, 920 C 960 mhz reference circuit input schematic for ? = 920 C 960 mhz reference circuit output schematic for ? = 920 C 960 mhz 1 2 3 tl 101 r 101 1300 ohm c 101 1000 pf r 102 1200 ohm c 102 1000 pf r 103 2000 ohm r 104 10 ohm tl 102 c 103 1000 pf tl 103 tl 104 tl 105 tl 106 tl 107 tl 108 tl 109 1 2 3 4 tl 110 port 3 c b e 1 2 3 4 s 4 in out nc nc 1 2 3 4 5 6 7 8 s 5 3 s 3 1 2 3 4 s 2 r 105 1 . 3 ohm 1 2 3 tl 111 1 2 3 tl 112 c 104 16 pf c 105 68 pf l 1 22 nh c 106 5 . 6 pf c 107 16 pf r 106 510 ohm r 107 10 ohm tl 113 tl 114 a 080304 m _ 960 mhz _ bdin _ 06 - 03 - 2010 rf _ in gate _ dut v dd rf _ out r 201 0 ohm 1 2 3 tl 201 1 2 3 tl 202 tl 203 tl 204 tl 205 tl 206 c 201 3 . 6 pf tl 207 tl 208 1 2 3 tl 209 tl 210 tl 211 tl 212 tl 213 c 202 68 pf c 203 68 pf tl 214 1 2 3 tl 215 tl 216 tl 217 tl 218 tl 219 tl 220 1 2 3 tl 221 tl 222 c 204 10000000 pf 1 2 3 tl 223 c 205 4710000 pf 1 2 3 tl 224 1 2 3 tl 225 a 080304 m _ 960 mhz _ bdout _ 06 - 03 - 2010 drain _ dut v dd
data sheet 6 of 17 rev. 04, 2010-06-09 PTFA220081M confidential, limited internal distribution reference circuit, 920 C 960 mhz (cont.) electrical characteristics at 960 mhz transmission electrical dimensions: mm dimensions: mils line characteristics input tl101 0.004 , 51.98 w w1 = 1.087, w2 = 1.087, w3 = 0.813 w1 = 43, w2 = 43, w3 = 32 tl102 0.024 , 51.98 w w = 1.087, l = 4.445 w = 43, l = 175 tl103 0.011 , 51.98 w w = 1.087, l = 2.057 w = 43 l = 81 tl104 w = 1.524 w = 60 tl105 0.008 , 54.17 w w = 1.016, l = 1.524 w = 40, l = 60 tl106 0.027 , 41.75 w w = 1.524, l = 5.080 w = 60, l = 200 tl107 0.010 , 25.04 w w = 3.048, l = 1.778 w = 120, l = 70 tl108 0.003 , 41.75 w w = 1.524, l = 0.508 w = 60, l = 20 tl109 0.007 , 41.75 w w = 1.524, l = 1.270 w = 60, l = 50 tl110 w1 = 3.048, w2 = 0.762, w3 = 3.048, w4 = 0.762 w1 = 120, w2 = 30, w3 = 120, w4 = 30 tl111, tl112 0.005 , 51.98 w w1 = 1.087, w2 = 1.087, w3 = 1.016 w1 = 43, w2 = 43, w3 = 40 tl113 0.017 , 51.98 w w = 1.087, l = 3.264 w = 43, l = 129 tl114 0.070 , 51.98 w w = 1.087, l = 13.259 w = 43, l = 522 output tl201 0.008 , 41.75 w w1 = 1.524, w2 = 1.524, w3 = 1.524 w1 = 60, w2 = 60, w3 = 60 tl202, tl225 0.007 , 47.12 w w1 = 1.270, w2 = 1.270, w3 = 1.270 w1 = 50, w2 = 50, w3 = 50 tl203 0.060 , 47.12 w w = 1.270, l = 11.361 w = 50, l = 447 tl204 w1 = 0.020, w2 = 0.020, offset = 0.007 w1 = 20, w2 = 780, offset = 280 tl205 0.007 , 4.74 w w = 20.119, l = 1.270 w = 792, l = 50 tl206 w1 = 0.001, w2 = 0.001, offset = 0.011 w1 = 1, w2 = 50, offset = 416 tl207 0.003 , 41.75 w w = 1.524, l = 0.508 w = 60, l = 20 tl208 0.008 , 41.75 w w = 1.524, l = 1.524 w = 60, l = 60 tl209 0.004 , 25.04 w w1 = 3.048, w2 = 3.048, w3 = 0.762 w1 = 120, w2 = 120, w3 = 30 tl210 w1 = 1.087, w2 = 3.048 w1 = 43, w2 = 120 tl211 0.010 , 25.04 w w = 3.048, l = 1.778 w = 120, l = 70 tl212 0.007 , 63.89 w w = 0.762, l = 1.270 w = 30, l = 50 tl213 w1 = 0.001, w2 = 0.005, offset = -0.002 w1 = 1, w2 = 208, offset = -79 tl214 0.044 , 41.75 w w = 1.524, l = 8.204 w = 60, l = 323 tl215 0.007 , 41.75 w w1 = 1.524, w2 = 1.524, w3 = 1.270 w1 = 60, w2 = 60, w3 = 50 tl216 0.007 , 47.12 w w = 1.270, l = 1.267 w = 50, l = 50 tl217 0.032 , 47.12 w w = 1.270, l = 5.918 w = 50, l = 233 tl218 0.032 , 15.92 w w = 5.283, l = 5.687 w = 208, l = 224 tl219 0.016 , 51.98 w w = 1.087, l = 2.946 w = 43, l = 116 tl220 0.017 , 51.98 w w = 1.087, l = 3.264 w = 43, l = 129 tl221 0.004 , 51.98 w w1 = 1.087, w2 = 1.087, w3 = 0.813 w1 = 43, w2 = 43, w3 = 32 tl222 0.104 , 51.98 w w = 1.087, l = 19.736 w = 43, l = 777 tl223 0.011 , 47.12 w w1 = 1.270, w2 = 1.270, w3 = 2.032 w1 = 50, w2 = 50, w3 = 80 tl224 0.000 , 144.35 w w1 = 0.025, w2 = 0.025, w3 = 0.025 w1 = 1, w2 = 1, w3 = 1
PTFA220081M confidential, limited internal distribution data sheet 7 of 17 rev. 04, 2010-06-09 reference circuit, 920 C 960 mhz (cont.) reference circuit assembly diagram (not to scale)* ptfa 220081 m _ 01 _ cus 960 mhz ro 4350 , . 020 ( 73 ) ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? c 105 rf _in rf _ out v dd c 106 c 102 c 103 c 104 c 107 r 105 r 107 r 102 r 103 r 201 r 104 r 106 s 2 l 1 r 101 c 101 c 205 c 204 c 202 c 201 c 203 s 3 dut s 4 s 5 * gerber files for this circuit available on request
data sheet 8 of 17 rev. 04, 2010-06-09 PTFA220081M confidential, limited internal distribution reference circuit, 920 C 960 mhz (cont.) circuit assembly information dut PTFA220081M ldmos transistor pcb ltn/PTFA220081MC9 0.508 mm [.020"] thick, e r = 3.48 rogers 4350, 1 oz. copper component description suggested manufacturer p/n input c101, c102, c103 chip capacitor, 1000 pf digi-key pcc1772ct-nd c104, c107 chip capacitor, 16 pf atc atc100a160jw150x c105 chip capacitor, 68 pf atc atc100a680jw150x c106 chip capacitor, 5.6 pf atc atc100a5r6cw150x l1 inductor, 22 nh atc atc0805wl22jt r101 resistor, 1300 w digi-key p1.3kgct-nd r102 resistor, 1200 w digi-key p1.2kgct-nd r103 resistor, 2000 w digi-key p2.0kect-nd r104 resistor, 10 w digi-key p10ect-nd r105 resistor, 1.3 w digi-key p1.3get-nd r106 resistor, 510 w digi-key p510ect-nd r107 resistor, 10 w digi-key p10gct-nd s2 emi flter, 2 - 4 a, 0.1 - 2.2 f murata nfm18ps105r0j3 s3 potentiometer, 2k w digi-key 3224w-202ect-nd s4 transistor digi-key bcp56 s5 voltage regulator national semiconductor lm7805 output c201 chip capacitor, 3.6 pf atc atc100a3r6cw150x c202, c203 chip capacitor, 68 pf atc atc100a680jw150x c204 capacitor, 10 f digi-key 587-1352-1-nd c205 chip capacitor, 4.71 f digi-key pcs3475ct-nd r201 resistor, 0 w digi-key p0.0ect-nd
PTFA220081M confidential, limited internal distribution data sheet 9 of 17 rev. 04, 2010-06-09 typical performance, 2140 mhz 0 10 20 30 40 50 -5 0 -4 0 -3 0 -2 0 -1 0 0 27 28 29 30 31 32 33 34 35 36 dr ain ef fi ci en cy (% ) im d & ac pr (d bc ) ou tp ut po we r (d bm ) tw o- ca rrie r wc dma 3g pp dr iv e- up v dd = 28 v, i dq = 100 ma , ? = 2140 mh z 3g pp wc dm a, p/ ar = 8: 1, 10 mh z ca rr ier sp ac i ng, bw 3. 84 mh z e ffi ci enc y ac pr im d u p im d lo w 20 25 30 35 40 45 50 55 60 65 13 14 15 16 17 18 19 20 21 22 32 33 34 35 36 37 38 39 40 41 dr a in ef fi ci en cy (% ) ga in (d b) ou tp ut po we r (d bm ) cw ga in & ef fi ci ency vs . out put po we r v dd = 28 v, i dq = 100 ma , ? = 2140 mh z ga in +8 5 c ga in +2 0 c ga in -30 c e f f i ci enc y +8 5 c e f f i ci enc y +2 0 c e f f i ci enc y -30 c 0 10 20 30 40 50 15. 5 16. 0 16. 5 17. 0 17. 5 18. 0 27 28 29 30 31 32 33 34 35 36 dr ain ef fi c ien cy (% ) ga in (d b) ou tp ut po we r (d bm ) tw o- ca rri er w cdma 3g pp v dd = 28 v, i dq = 1 00 ma , ? = 2140 mh z, 3g pp w cdm a, p/ ar = 8: 1, 10 mh z ca rr ier sp ac ing, bw 3. 84 mh z ga in ef fi ci en cy 10 20 30 40 50 60 15 .5 16 .0 16 .5 17 .0 17 .5 18 .0 32 33 34 35 36 37 38 39 40 41 e ffi c ien cy (% ) po we r ga in (d b) ou tp ut po we r (d bm ) cw ga in & e ffc ie ncy vs . out put po we r & v dd i dq = 100 ma , ? = 2140 mh z v dd = 24 v v dd = 28 v v dd = 32 v ga in e ffi ci en cy
data sheet 10 of 17 rev. 04, 2010-06-09 PTFA220081M confidential, limited internal distribution typical performance, 2140 mhz (cont.) 10 20 30 40 50 -5 0 -4 0 -3 0 -2 0 -1 0 33 34 35 36 37 38 39 40 41 e ffi ci en cy (% ) im d (d bc ) ou tp ut po we r, pep (d bm ) tw o- t one dr iv e- up v dd = 28 v, i dq = 100 ma , ? 1 = 2139. 5 mh z, ? 2 = 2140. 5 mh z ef fi c ien c y im d3 20 25 30 35 40 45 50 15. 0 15. 5 16. 0 16. 5 17. 0 17. 5 18. 0 35 36 37 38 39 40 41 ef fi ci en cy (% ) ga in (d b) ou tp ut po we r, pep (d bm ) tw o- t one dr iv e- up v dd = 28 v, i dq = 100 ma , ? 1 = 2139. 5 mh z, ? 2 = 2140. 5 mh z e ffi c ien cy ga in -5 0 -4 5 -4 0 -3 5 -3 0 -2 5 -2 0 -1 5 10 15 20 25 30 35 40 45 2040 2 080 2120 2160 2200 224 0 im d (d bc ) ef fi ci en cy (% ) fr equen cy (m hz ) tw o- t one br oadband e ffi ci ency & im d vs. fr e quenc y v dd = 28 v, i dq = 100 ma , av er age pep = 8 w, sp ac ing = 100 kh z e ffi ci en cy im d3 im d5 -1 2 -1 0 -8 -6 -4 -2 0 12 13 14 15 16 17 18 2 040 2080 2120 2160 2200 2240 re tu rn los s (d b) ga in (d b) fr equen cy (m hz ) tw o- to ne br oadband ga in & re tu rn loss vs . fr equenc y v dd = 28 v, i dq = 100 ma , av er a ge pep = 8 w, sp ac i ng = 100 kh z ga in rl
PTFA220081M confidential, limited internal distribution data sheet 11 of 17 rev. 04, 2010-06-09 typical performance, 2140 mhz (cont.) 16. 0 16. 5 17. 0 17. 5 18. 0 33 34 35 36 37 38 39 40 41 po we r ga in (d b) ou tp ut po we r (d bm ) tw o- t one ga in vs . out put po we r v dd = 28 v, ? 1 = 2139 .5 mh z, ? 2 = 2140 .5 mh z i dq = 80 ma i dq = 120 ma i dq = 100 ma -6 0 -5 0 -4 0 -3 0 -2 0 35 36 37 38 39 40 41 im d (d bc ) ou tp ut po we r, pep (d bm ) in te rm odul at io n di st or ti on vs . out put po we r v dd = 28 v, i dq = 100 ma , ? 1 = 2139. 5 mh z, ? 2 = 2140 .5 mh z 3r d or de r 7t h 5t h -5 5 -5 0 -4 5 -4 0 -3 5 -3 0 -2 5 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 im d (d bc ) to ne sp ac ing (m hz ) in te rm odul at i on di st or ti on vs . to ne spaci ng v dd = 28 v, i dq = 100 ma , ? = 2140 mh z, pep = 8 w 3r d or de r 7t h 5t h 15 25 35 45 55 65 15 .0 15 .5 16 .0 16 .5 17 .0 17 .5 31 32 33 34 35 36 37 38 39 40 41 dr ain e ffi ci en cy (% ) ga in (d b) ou t put po we r (d bm ) po we r sw eep, cw ga in & ef fi ci ency vs . out put po we r v dd = 28 v, i dq = 100 ma ef fi ci enc y ga in 2 110 mh z 2 140 mh z 2 170 mh z
data sheet 12 of 17 rev. 04, 2010-06-09 PTFA220081M confidential, limited internal distribution reference circuit, 2110 C 2170 mhz reference circuit input schematic for ? = 2110 C 2170 mhz reference circuit output schematic for ? = 2110 C 2170 mhz tl 103 c 104 6 . 2 pf c 105 6 . 2 pf tl 105 tl 107 tl 108 tl 109 1 2 3 4 tl 110 c 110 6 . 2 pf c 109 0 . 6 pf 1 2 3 tl 113 tl 114 c 107 3 . 6 pf 1 2 3 tl 111 c 106 12 pf r 106 510 ohm l 1 22 nh c 101 1000 pf r 103 1200 ohm c 102 1000 pf c 103 1000 pf r 101 1300 ohm r 104 2000 ohm r 102 10 ohm r 105 10 ohm tl 101 tl 102 port 3 rf _ in c b e 1 2 3 4 s 4 in out nc nc 1 2 3 4 5 6 7 8 s 5 3 s 3 1 2 3 4 s 2 c 108 4 . 1 pf 1 2 3 4 tl 112 1 2 3 4 tl 115 c 111 6 . 2 pf tl 104 tl 106 a 080304 m _ 2170 mhz _ bdin _ 06 - 03 - 2010 gate _ dut v dd 1 2 3 tl 202 tl 203 tl 201 tl 222 1 2 3 tl 213 tl 214 tl 215 tl 216 tl 217 tl 218 1 2 3 tl 220 tl 219 tl 204 tl 205 tl 206 tl 207 1 2 3 tl 208 tl 209 c 203 3 . 6 pf tl 210 tl 211 c 205 10000000 pf tl 225 1 2 3 tl 226 c 204 10 pf c 201 12 pf c 202 0 . 3 pf 1 2 3 tl 221 tl 223 1 2 3 tl 224 r 201 0 ohm 1 2 3 tl 212 a 080304 m _ 2170 mhz _ bdout _ 06 - 03 - 2010 rf _ out drain _ dut v dd
PTFA220081M confidential, limited internal distribution data sheet 13 of 17 rev. 04, 2010-06-09 reference circuit, 2110 C 2170 mhz (cont.) electrical characteristics at 2170 mhz transmission electrical dimensions: mm dimensions: mils line characteristics input tl101 0.054 , 51.98 w w = 1.087, l = 4.509 w = 43, l = 178 tl102 0.150 , 51.98 w w = 1.087, l = 12.548 w = 43, l = 494 tl103 0.027 , 51.98 w w = 1.087, l = 2.261 w = 43, l = 89 tl104 w = 1.524 w = 60 tl105 0.062 , 41.75 w w = 1.524, l = 5.080 w = 60, l = 200 tl106 0.018 , 54.17 w w = 1.016, l = 1.524 w = 40, l = 60 tl107 0.022 , 25.04 w w = 3.048, l = 1.778 w = 120, l = 70 tl108 0.006 , 41.75 w w = 1.524, l = 0.508 w = 60, l = 20 tl109 0.015 , 41.75 w w = 1.524, l = 1.270 w = 60, l = 50 tl110 w1 = 3.048, w2 = 0.762, w3 = 3.048, w4 = 0.762 w1 = 120, w2 = 30, w3 = 120, w4 = 30 tl111, tl113 0.012 , 51.98 w w1 = 1.087, w2 = 1.087, w3 = 1.016 w1 = 43, w2 = 43, w3 = 40 tl112 w1 = 1.087, w2 = 1.016, w3 = 1.087, w4 = 1.016 w1 = 43, w2 = 40, w3 = 43, w4 = 40 tl114 0.028 , 51.98 w w = 1.087, l = 2.311 w = 43, l = 91 tl115 w1 = 1.087, w2 = 1.016, w3 = 1.087, w4 = 1.016 w1 = 43, w2 = 40, w3 = 43, w4 = 40 output tl201 0.022 , 25.04 w w = 3.048, l = 1.778 w = 120, l = 70 tl202 0.010 , 25.04 w w1 = 3.048, w2 = 3.048, w3 = 0.762 w1 = 120, w2 = 120, w3 = 30 tl203 w1 = 1.087, w2 = 3.048 w1 = 43, w2 = 120 tl204 0.071 , 47.12 w w = 1.270, l = 5.918 w = 50, l = 233 tl205 0.072 , 15.92 w w = 5.283, l = 5.687 w = 208, l = 224 tl206 0.230 , 51.98 w w = 1.087, l = 19.202 w = 43, l = 756 tl207 0.039 , 51.98 w w = 1.087, l = 3.264 w = 43, l = 129 tl208 0.012 , 51.98 w w1 = 1.087, w2 = 1.087, w3 = 1.016 w1 = 43, w2 = 43, w3 = 40 tl209 0.032 , 51.98 w w = 1.087, l = 2.642 w = 43, l = 104 tl210 0.006 , 41.75 w w = 1.524, l = 0.508 w = 60, l = 20 tl211 0.018 , 41.75 w w = 1.524, l = 1.524 w = 60, l = 60 tl212 0.018 , 41.75 w w1 = 1.524, w2 = 1.524, w3 = 1.524 w1 = 60, w2 = 60, w3 = 60 tl213 0.015 , 47.12 w w1 = 1.270, w2 = 1.270, w3 = 1.270 w1 = 50, w2 = 50, w3 = 50 tl214 0.035 , 47.12 w w = 1.270, l = 2.896 w = 50, l = 114 tl215 w1 = 0.020, w2 = 0.020, offset = 0.007 w1 = 20, w2 = 780, offset = 280 tl216 0.017 , 4.74 w w = 20.119, l = 1.270 w = 792, l = 50 tl217 w1 = 0.001, w2 = 0.005, offset = -0.002 w1 = 1, w2 = 208, offset = -79 tl218 0.099 , 41.75 w w = 1.524, l = 8.204 w = 60, l = 323 tl219 0.015 , 47.12 w w = 1.270, l = 1.267 w = 50, l = 50 tl220 0.015 , 41.75 w w1 = 1.524, w2 = 1.524, w3 = 1.270 w1 = 60, w2 = 60, w3 = 50 tl221 0.008 , 51.98 w w1 = 1.087, w2 = 1.087, w3 = 0.635 w1 = 43, w2 = 43, w3 = 25 tl222 0.015 , 63.89 w w = 0.762, l = 1.270 w = 30, l = 50 tl223 w1 = 0.001, w2 = 0.001, offset = 0.011 w1 = 1, w2 = 50, offset = 416 table continued next page
data sheet 14 of 17 rev. 04, 2010-06-09 PTFA220081M confidential, limited internal distribution reference circuit, 2110 C 2170 mhz (cont.) reference circuit assembly diagram (not to scale)* ptfa 220081 m _ 01 _ cus 2170 mhz ro 4350 , . 020 ( 73 ) ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 1 dut c 202 c 203 c 201 r 201 c 204 c 205 s 5 s 3 s 4 c 101 r 101 c 109 c 105 r 104 c 103 c 102 r 103 r 102 r 106 c 107 c 104 c 111 c 110 c 108 r 105 c 106 rf _in rf _ out v dd s 2 reference circuit, 2110 C 2170 mhz (cont.) electrical characteristics at 2170 mhz (cont.) transmission electrical dimensions: mm dimensions: mils line characteristics tl224 0.015 l, 47.12 w1 = 1.270, w2 = 1.270, w3 = 1.270 w1 = 50, w2 = 50, w3 = 50 tl225 0.111 l, 47.12 w = 1.270, l = 9.225 w = 50, l = 363 tl226 0.015 l, 47.12 w1 = 1.270, w2 = 1.270, w3 = 1.270 w1 = 50, w2 = 50, w3 = 50 * gerber files for this circuit available on request
PTFA220081M confidential, limited internal distribution data sheet 15 of 17 rev. 04, 2010-06-09 reference circuit, 2110 C 2170 mhz (cont.) circuit assembly information dut PTFA220081M ldmos transistor pcb ltn/PTFA220081M 0.508 mm [.020"] thick, e r = 3.48 rogers 4350, 1 oz. copper component description suggested manufacturer p/n input c101, c102, c103 chip capacitor, 1000 pf atc pcc1772ct-nd c104, c105, c110, c111 chip capacitor, 6.2 pf atc atc100a6r2cw150x c106 chip capacitor, 12 pf atc atc100a120fjw150x c107 chip capacitor, 3.6 pf atc atc100a3r6cw150x c108 chip capacitor, 4.1 pf atc atc100a4r1cw150x c109 chip capacitor, 0.6 pf atc atc100a0r6cw150x l1 inductor, 22 nh atc atc0805wl22jt r101 resistor, 1300 w digi-key p1.3kgct-nd r102 resistor, 10 w digi-key p10ect-nd r103 resistor, 1200 w digi-key p1.2kgct-nd r104 resistor, 2000 w digi-key p2.0kect-nd r105 resistor, 10 w digi-key p10gct-nd r106 resistor, 510 w digi-key p510ect-nd s2 emi flter, 2 - 4 a, 0.1 - 2.2 f digi-key nfm18ps105r0j3 s3 potentiometer, 2k w digi-key 3224w-202ect-nd s4 transistor digi-key bcp56 s5 voltage regulator national semiconductor lm7805 output c201 chip capacitor, 12 pf atc atc100a120cw150x c202 chip capacitor, 0.3 pf atc atc100a0r3cw150x c203 chip capacitor, 3.6 pf atc atc100a3r6cw150x c204 chip capacitor, 10 pf atc atc100a100cw150x c205 capacitor, 10 f digi-key 587-1352-1-nd r201 resistor, 0 w digi-key p0.0ect-nd
data sheet 16 of 17 rev. 04, 2010-06-09 PTFA220081M confidential, limited internal distribution package outline specifcations package pg-son-10 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.1 [.004] unless specifed otherwise. 4. package dimension: 4.00 mm x 4.00 mm x 1.42 mm. 5. pins: s = source, 1 C 5 = gate, 6 C 10 = drain. 6. nipdau plating (gold top layer): 0.025 C 0.127 micron [1 C 5 microinch]. find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower top view 4. 00 [. 157 ] 4.00 [. 157 ] index markin g bottom view 5 4 3 2 1 6 7 8 9 10 5x .515 [.0203] 2 places 2 .37 [. 093 ] 0.54 [.021] 2 places 5x .320 [.0126] 2 places .815 [.0321 ] 0.30 [. 012 ] 3.40 [.134 ] index markin g 4x 0. 65 [.026] 2 places 2.97 [.117] s side view 0.38 [.015] both side s 1.42 [.056 ] 0. 05 [.002 ] pg -s on -1 0_ po _02- 19-201 0

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